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Electron cyclotron resonance plasma assisted sputter deposition of boron nitride films

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2 Author(s)
Mohan Rao, G. ; Department of Instrumentation, Indian Institute of Science, Bangalore 560012, India ; Krupanidhi, S.B.

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Boron nitride films have been deposited on p-type silicon substrates by rf sputtering in the presence of an electron cyclotron resonance (ECR) plasma at a temperature of 450 °C. Structural phases were identified using IR spectroscopy and electrical characterization was carried out in the metal-insulator-semiconductor configuration. It was shown that the presence of ECR plasma enhanced the formation of cubic phase at substrate temperature as low as 450 °C, along with hexagonal phase. The dielectric constant was found to be 6–8 and the resistivity was about 1012 Ω cm. The capacitance-voltage characteristics indicated good electronic interface with the presence of ECR plasma, with the density of states of about 1.18×1012 eV-1 cm-2. The density of states was found to be higher by a factor of 2 in the absence of ECR plasma. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 5 )