By Topic

Electron cyclotron resonance plasma assisted sputter deposition of boron nitride films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mohan Rao, G. ; Department of Instrumentation, Indian Institute of Science, Bangalore 560012, India ; Krupanidhi, S.B.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Boron nitride films have been deposited on p-type silicon substrates by rf sputtering in the presence of an electron cyclotron resonance (ECR) plasma at a temperature of 450 °C. Structural phases were identified using IR spectroscopy and electrical characterization was carried out in the metal-insulator-semiconductor configuration. It was shown that the presence of ECR plasma enhanced the formation of cubic phase at substrate temperature as low as 450 °C, along with hexagonal phase. The dielectric constant was found to be 6–8 and the resistivity was about 1012 Ω cm. The capacitance-voltage characteristics indicated good electronic interface with the presence of ECR plasma, with the density of states of about 1.18×1012 eV-1 cm-2. The density of states was found to be higher by a factor of 2 in the absence of ECR plasma. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 5 )