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Calculation of temperature dependent threshold current density of ZnCdSe/ZnSe quantum well laser including many body effects

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2 Author(s)
Bandyopadhyay, A. ; Central Electronics Engineering Research Institute, Pilani 333 031, India ; Basu, P.K.

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We have calculated the threshold current density of the ZnCdSe/ZnSe quantum well laser as a function of temperature by incorporating many body Coulomb interactions, both the heavy- and light hole subbands, as well as the temperature and energy dependencies of linewidth for laser transition. The effect of finite well width and well depth in the Coulomb interaction is also considered instead of taking strictly two-dimensional Coulomb potential. The calculated values of nominal threshold current density are 1.5 times larger than the values calculated without considering Coulomb interaction, whereas calculations using strictly two-dimensional Coulomb potential show 7% overestimation. Good agreement is obtained between the reported experimental results and the theoretical threshold current densities for a Zn0.83Cd0.17Se/ZnSe multiple quantum well laser assuming a value of 0.8 for the internal quantum efficiency. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 5 )