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Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation

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7 Author(s)
Ghislotti, G. ; Department of Applied Physics, Brookhaven National Laboratory, Upton, New York 11973 ; Nielsen, B. ; Asoka-Kumar, P. ; Lynn, K.G.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.118315 

Positron annihilation spectroscopy (PAS) is used to study Si-rich SiO2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3×1016–3×1017 cm-2 and subsequent thermal annealing at high temperature (up to 1100 °C). Samples implanted at doses higher than 5×1016 cm-2 and annealed above 1000 °C showed a PAS spectrum with an annihilation peak broader than the unimplanted sample. We discuss how these results are related to the process of silicon precipitation inside SiO2. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 4 )

Date of Publication:

Jan 1997

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