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Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

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6 Author(s)
Lane, B. ; Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208 ; Wu, D. ; Rybaltowski, A. ; Yi, H.
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A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 4 )