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Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures

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2 Author(s)
Yusa, G. ; Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106, Japan, Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153, JapanQuantum Transition Project, JRDC, 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan ; Sakaki, H.

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The trapping of photogenerated carriers by embedded InAs quantum dots (QDs) has been studied at 77 K in novel GaAs/n-AlGaAs structures. It is found that the concentration Ns of two dimensional electrons at a given gate voltage Vg is persistently increased by light illumination, because of the trapping of holes by QDs. By the interplay of the gate voltage and photocarrier generation, a distinct hysteresis is observed in the Ns-Vg characteristics. A drastic change of electron mobility by a factor of 19 is achieved by light illumination. The applications of this device for a novel light-controllable floating dot memory is suggested. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 3 )