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Spontaneous lateral alignment of In0.25Ga0.75As self-assembled quantum dots on (311)B GaAs grown by gas source molecular beam epitaxy

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5 Author(s)
Nishi, Kenichi ; Opto-Electronics Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305, Japan ; Anan, T. ; Gomyo, A. ; Kohmoto, Shigeru
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Spontaneous lateral alignment was observed in InGaAs quantum dots formed by self-assembly on (311)B GaAs by gas source molecular beam epitaxy. The alignment occurred in a direction inclined about 60° from the [011] direction on a (3-11) [(311)B] surface. A typical base diameter of the dots was about 120±10 nm. The heights varied from 3 to 13 nm as the nominal thickness of the InGaAs layer increased from 4 to 8 nm. The formation mechanism for the alignment is studied based on the growth thickness dependence of the dot structures. A photoluminescence linewidth of 24 meV was obtained from 9 nm high dots at 77 K, indicating the formation of a uniform dot structure. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 26 )

Date of Publication:

Jun 1997

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