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Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

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7 Author(s)
Aigouy, Lionel ; Physics Department and New York State Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210 ; Holden, Todd ; Pollak, Fred H. ; Ledentsov, N.N.
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Contactless electroreflectance, at both 300 and 20 K, has been used to investigate a vertically coupled quantum dot (QD)-based InAs/GaAs laser structure. Signals have been observed from all the relevant portions of the sample including the QDs and wetting layer. The energies of the QD transitions provide evidence for both lateral as well as vertical coupling. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 25 )