By Topic

Surface morphology and optical characterization of GaN grown on α-Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yeadon, M. ; University of Illinois at Urbana-Champaign, Materials Research Laboratory, Urbana, Illinois 61801 ; Hamdani, F. ; Xu, G.Y. ; Salvador, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.118737 

Wurtzitic GaN epilayers have been grown on sapphire (0001) substrates by radio-frequency atomic nitrogen plasma-assisted molecular beam epitaxy. Atomic force microscopy, reflectivity, and photoluminescence measurements have been performed in order to investigate the influence of in situ and ex situ annealing on the surface morphology and optical properties. We demonstrate a significant improvement in both the structural and optical quality of our GaN epilayers using in situ annealed low-temperature-deposited GaN buffer layers. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 22 )