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A tunneling field-effect transistor with an ultrashort channel-length of 25 nm has been experimentally realized using InAs/AlSb heterostructures. The conduction between the source and the drain is through a sequential process, including tunneling and drift-diffusion mechanisms. According to its operating principle, the transistor is inherently free of the conventional short-channel effects. The results demonstrate a new scheme of building nanometer-scale transistors. © 1997 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:70
,
Issue:
22
)
Date of Publication: Jun 1997
- Page(s):
- 3005 - 3007
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.118731
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Jun 1997
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