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Metalorganic vapor-phase epitaxy of cubic AlxGa1-xN alloy on a GaAs (100) substrate

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2 Author(s)
Nakadaira, Atsushi ; NTT Integrated Information & Energy Systems Laboratories, 3-9-11, Midori-cho, Musashino-shi, Tokyo 180, Japan ; Tanaka, Hidenao

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Cubic AlxGa1-xN was grown on a GaAs (100) substrate by using low-pressure metalorganic vapor-phase epitaxy with a GaN buffer layer grown at low and high temperatures. The high-growth–temperature GaN layer improved the quality of the cubic AlxGa1-xN. Also, the AlN molar fraction could be controlled by changing the carrier gas flow of trimethylaluminum. The AlxGa1-xN epitaxial layers in the range of 0≤x≤0.23 exhibited strong near-band-edge photoluminescence at room temperature. Their photoluminescence peak energies show a linear dependence on the molar fraction. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 20 )