Fe+ ions of 200 keV in energy were implanted into Si(111) at 350 °C with a dose of 7×1017 cm-2. The depth distribution of the two formed phases (Є-FeSi and β-FeSi2) was investigated nondestructively up to a depth of about 800 Å by depth-selective conversion-electron Mössbauer spectroscopy (DCEMS) in combination with depth-profiling (destructive) Auger electron spectroscopy (AES). Near the surface only β-FeSi2 is formed, while a mixture of β-FeSi2 and Є-FeSi is formed at larger depths. The Fe-concentration depth profile calculated from the DCEMS results is in good agreement with that measured by AES. © 1997 American Institute of Physics.