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Depth analysis of phase formation in Si after high-dose Fe ion implantation by depth-selective conversion-electron Mössbauer spectroscopy

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4 Author(s)
Kruijer, S. ; Laboratorium für Angewandte Physik, Gerhard-Mercator-Universität Duisburg, Lotharstr. 65, D-47048 Duisburg, Germany ; Keune, W. ; Dobler, M. ; Reuther, H.

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Fe+ ions of 200 keV in energy were implanted into Si(111) at 350 °C with a dose of 7×1017cm-2. The depth distribution of the two formed phases (Є-FeSi and β-FeSi2) was investigated nondestructively up to a depth of about 800 Å by depth-selective conversion-electron Mössbauer spectroscopy (DCEMS) in combination with depth-profiling (destructive) Auger electron spectroscopy (AES). Near the surface only β-FeSi2 is formed, while a mixture of β-FeSi2 and Є-FeSi is formed at larger depths. The Fe-concentration depth profile calculated from the DCEMS results is in good agreement with that measured by AES. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 20 )

Date of Publication:

May 1997

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