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We report electron transport properties through InAs self-assembled quantum dots in a modulation-doped structure with split gates. We observed drain current modulation with respect to gate voltage due to electron transport through the quantum level of InAs dots. The energy gaps estimated from the temperature dependence study of valley current and the voltage difference between the drain current peaks were consistent with each other and as large as 14 meV. The energy gaps can be explained by the charging energy of the InAs dots. © 1997 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:70
,
Issue:
17
)
Date of Publication: Apr 1997
- Page(s):
- 2294 - 2296
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.118840
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Apr 1997
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