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Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates

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4 Author(s)
Bufler, F.M. ; Institut für Theoretische Elektrotechnik und Mikroelektronik, Universität Bremen, D-28334 Bremen, Germany ; Graf, P. ; Keith, S. ; Meinerzhagen, B.

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In-plane drift velocities determined by full band Monte Carlo simulations and drift mobility calculations are reported for electrons in strained Si grown on Si1-xGex substrates up to x=0.4 at 77 and 300 K. Drift mobilities of 28200 cm2/(V s) at 77 K and 2230 cm2/(V s) at 300 K are found for x=0.3. Strain enhances the drift velocity significantly only below electric fields of about 50 kV/cm. At 77 K the Gunn effect is predicted to occur above 15 kV/cm. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 16 )