Cart (Loading....) | Create Account
Close category search window
 

Full band Monte Carlo investigation of electron transport in strained Si grown on Si1-xGex substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Bufler, F.M. ; Institut für Theoretische Elektrotechnik und Mikroelektronik, Universität Bremen, D-28334 Bremen, Germany ; Graf, P. ; Keith, S. ; Meinerzhagen, B.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.119259 

In-plane drift velocities determined by full band Monte Carlo simulations and drift mobility calculations are reported for electrons in strained Si grown on Si1-xGex substrates up to x=0.4 at 77 and 300 K. Drift mobilities of 28200 cm2/(V s) at 77 K and 2230 cm2/(V s) at 300 K are found for x=0.3. Strain enhances the drift velocity significantly only below electric fields of about 50 kV/cm. At 77 K the Gunn effect is predicted to occur above 15 kV/cm. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 16 )

Date of Publication:

Apr 1997

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.