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Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

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16 Author(s)
Knap, W. ; G.E.S.-Universite Montpellier 2 and CNRS-UMR357, 34095 Montpellier, France ; Contreras, S. ; Alause, H. ; Skierbiszewski, C.
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We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN–AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented. We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230±0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 16 )