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Optical properties of tensile-strained wurtzite GaN epitaxial layers

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5 Author(s)
Chichibu, S. ; Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278, Japan ; Azuhata, T. ; Sota, T. ; Amano, H.
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Photo-modulated electroreflectance and photoluminescence spectra of wurtzite GaN epilayers grown on a 6H-SiC (0001)Si or a Si (111) substrate were measured as a function of temperature. The valence band structure of a biaxially tensile-strained (-0.15% in c axis) epilayer was drastically changed compared to that in unstrained and compressively strained ones; the optical transition between the conduction and the uppermost valence band exhibiting the minimum transition energy was polarized parallel to the c axis, which is characteristic of the spin split-off valence band in unstrained crystal. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 16 )