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Browse Journals & Magazines > Applied Physics Letters ...> Volume:70 Issue:15 Help

Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

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4 Author(s)
Li, Hui-feng ; School of Microelectronics Engineering, Griffith University, Nathan, QLD 4111, Australia ; Dimitrijev, S. ; Harrison, H.Barry ; Sweatman, D.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.118773 

Interfacial characteristics of Al/SiO2/n-type 6H–SiC metal–oxide–semiconductor capacitors fabricated by rapid thermal processing (RTP) with N2O and NO annealing are investigated. Interface state density was measured by a conductance technique at room temperature. RTP oxidation in pure O2 leads to an excellent SiO2/n-type 6H–SiC interface with interface state density in the order of 1010–1011 eV-1 cm-2. NO annealing improves the SiO2/n-type 6H–SiC interface, while N2O annealing increases the interface state density. © 1997 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:70 ,  Issue: 15 )

Date of Publication: Apr 1997

Page(s):
2028 - 2030
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.118773
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 1997

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