c-axis textured La0.7Sr0.3MnO3-δ (LSMO) films were fabricated on SiO2/Si(001) substrates using a Bi4Ti3O12 (BTO) template layer. Electrical and magnetic properties of LSMO were investigated. The LSMO/BTO layer of this structure has no in-plane alignment. Even though a ferromagnetic transition temperature, TC, is as high as that of the epitaxial LSMO film (360 K), a resistivity peak temperature, TP, is about 140 K lower than TC. The resistivity behavior as a function of temperature for LSMO/BTO/SiO2/Si films is found to be dominated by grain boundary effects. Low field sensitive magnetoresistance which suggests spin tunneling through the grain boundaries is also observed at room temperature. © 1997 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:70
,
Issue:
13
)
Date of Publication:
Mar 1997
- Page(s):
-
1763
-
1765
- ISSN :
-
0003-6951
- Digital Object Identifier :
-
10.1063/1.118649
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
18 June 2009
- Issue Date :
-
Mar 1997