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Analysis of In0.07Ga0.93As layers on GaAs compliant substrates by double crystal x-ray diffraction

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4 Author(s)
Carter-Coman, Carrie ; School of Electrical and Computer Engineering, Atlanta, Georgia 30332-0250 ; Bicknell-Tassius, R. ; Brown, April S. ; Jokerst, N.M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.118647 

Double crystal x-ray diffraction data is presented from the most extensive compliant substrate experiment to date. Five consecutive InGaAs–GaAs growths were performed simultaneously on GaAs-based thin film compliant substrates and thick reference substrates. The In0.07Ga0.93As layers were grown to thicknesses below and above the conventional critical thickness. It was found that InGaAs films grown on the compliant substrates have a larger critical thickness and slower strain relief than InGaAs grown on conventional GaAs substrates. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 13 )

Date of Publication:

Mar 1997

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