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Evolution of the local environment around Er upon thermal annealing in Er and O co-implanted Si

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6 Author(s)
Terrasi, A. ; Consiglio Nazionale delle Ricerche, Istituto Nazionale Metodologie e Tecnologie per la Microelettronica, I-95121 Catania, Italy ; Franzo, G. ; Coffa, S. ; Priolo, F.
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We present extended x-ray absorption fine structure (EXAFS) analyses of the Er LIII edge in Er-doped (100) Si samples. The samples were prepared by multiple implants of Er and O resulting in the incorporation of 1×1019 Er/cm3 and 1×1020 O/cm3 in a 2.3-μm-thick amorphous layer. It has been found that the local environment around the Er sites, which consists of six Si first neighbors in the amorphous layer, evolves towards a mixed coordination with O and Si atoms after epitaxial regrowth of the layer at 620 °C for 3 h. A further thermal treatment at 900 °C removes the residual Er–Si coordination and produces a full oxygen coordinated first shell with an average of 5 O neighbors. The effects of the different thermal processes on the high resolution spectra of the 1.54 μm Er photoluminescence were also measured and related to the EXAFS results. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 13 )