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Surface modification of indium tin oxide by plasma treatment: An effective method to improve the efficiency, brightness, and reliability of organic light emitting devices

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4 Author(s)
Wu, C.C. ; Department of Electrical Engineering, Advanced Technology Center for Photonic and Optoelectronic Materials (ATC/POEM), Princeton University, Princeton, New Jersey 08544 ; Wu, C.I. ; Sturm, J.C. ; Kahn, A.

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We demonstrate the improvement of an indium tin oxide anode contact to an organic light emitting device via oxygen plasma treatment. Enhanced hole-injection efficiency improves dramatically the performance of single-layer doped-polymer devices: the drive voltage drops from ≫20 to ≪10 V, the external electroluminescence quantum efficiency (backside emission only) increases by a factor of 4 (from 0.28% to 1%), a much higher drive current can be applied to achieve a much higher brightness (maximum brightness ∼10,000 cd/m2 at 1000 mA/cm2), and the forward-to-reverse bias rectification ratio increases by orders of magnitude (from 102 to 106–107). The lifetime of the device is also enhanced by two orders of magnitude. © 1997 American Institute of Physics.

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Applied Physics Letters  (Volume:70 ,  Issue: 11 )