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Fabrication and electroluminescence of double-layered organic light-emitting diodes with the Al2O3/Al cathode

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4 Author(s)
Li, F. ; Ames Laboratory–USDOE and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011 ; Tang, H. ; Anderegg, J. ; Shinar, J.

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The effects of a controlled Al2O3 buffer layer on the behavior of highly efficient vacuum evaporated aqua regia-treated indium tin oxide (ITO)/triphenyl diamine (TPD)/8-tris-hydroxyquino-line aluminum Alq3/Al2O3/Al light-emitting diodes are described. It is found that, with a buffer layer of suitable thickness, both current injection and electroluminescence output are significantly enhanced. The enhancement is believed to be due to increased charge carrier density near the TPD/Alq3 interface that results from enhanced electron tunneling, and removal of exciton-quenching gap states that are intrinsic to the Alq3/Al interface. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 10 )