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Anisotropy and growth-sequence dependence of atomic-scale interface structure in InAs/Ga1-xInxSb superlattices

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4 Author(s)
Lew, A.Y. ; Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093-0407 ; Zuo, S.L. ; Yu, E.T. ; Miles, R.H.

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We have used cross-sectional scanning tunneling microscopy to study the atomic-scale interface structure of InAs/Ga1-xInxSb superlattices grown by molecular beam epitaxy. Detailed, quantitative analysis of interface profiles obtained from constant-current images of both (110) and (11¯0) cross-sectional planes of the superlattice indicate that interfaces in the (11¯0) plane exhibit a higher degree of interface roughness than those in the (110) plane, and that the Ga1-xInxSb-on-InAs interfaces are rougher than the InAs-on-Ga1-xInxSb interfaces. The roughness data are consistent with anisotropy in interface structure arising from anisotropic island formation during growth, and in addition a growth-sequence-dependent interface asymmetry resulting from differences in interfacial bond structure between the superlattice layers. © 1997 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:70 ,  Issue: 1 )