Exciton region reflectance of homoepitaxial GaN layers

Reflection measurements in the exciton region of GaN homoepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on GaN single crystals are reported. At low temperature (4.2 K) three free exciton lines have been found with energies; EA=3.4776 eV, EB=3.4827 eV, and EC=3.502 eV. The spin‐orbit parameter Δso=19.7±1.5 meV and the crystal field parameter Δcr=9.3±0.3 meV have been obtained. From temperature dependence of exciton spectra the energy gap dependence has been found: E(T)=E(0)-λ/[exp(β/T)-1] (λ=0.121 eV, β=316 K). © 1996 American Institute of Physics.