By Topic

Optical properties of defects in ion implanted silicon carbide probed at λ=633 nm

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Musumeci, P. ; Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Corso Italia, 57 Catania, Italy ; Calcagno, L. ; Grimaldi, M.G. ; Foti, G.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The damage produced in silicon carbide single crystal by ion implantation was investigated by in situ optical transmittance and reflectance at 633 nm and by Rutherford backscattering channeling spectroscopy. Implantations were performed at room temperature with different ions (He, N, Ar, Kr, and Xe) in the fluence range 1011–2.5×1016 ions/cm 2. During irradiation a reduction of transmittance and a contemporary increase of reflectance occurred. RBS indicated a continuous accumulation of damage within a depth comparable with the ion range until the formation of an amorphous layer. A combination of optical and RBS data allowed to correlate the optical constant (n,k) to the damage produced during irradiation. Such a correlation was identical for every ion pointing out that the optical properties of the damaged material are independent of the energy density inside the single cascade. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:69 ,  Issue: 4 )