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Evidence for internal electric fields in two variant ordered GaInP obtained by scanning capacitance microscopy

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4 Author(s)
Leong, J‐K. ; Department of Physics, University of Utah, Salt Lake City, Utah 84112 ; Williams, C.C. ; Olson, J.M. ; Froyen, S.

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Single and two variant ordered GaInP samples are studied in cross section with the scanning capacitance microscope. Our study shows significant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p‐type like domains are observed with the scanning capacitance microscope. In contrast, a spatially uniform capacitance signal is observed in unintentionally doped single variant ordered GaInP. These microscopic capacitance observations can be qualitatively explained by bend bending or internal electric fields. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:69 ,  Issue: 26 )

Date of Publication:

Dec 1996

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