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Self‐assembled quantum dots of InSb grown on InP by atomic layer molecular beam epitaxy: Morphology and strain relaxation

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7 Author(s)
Ferrer, J.C. ; EME, Enginyeria i Materials Electrònics, Departamento Física Aplicada i Electrònica, Universitat de Barcelona, Diagonal 645‐647, E‐08028, Barcelona, Spain ; Peiro, F. ; Cornet, A. ; Morante, J.R.
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Self‐organized InSb dots grown by atomic layer molecular beam epitaxy on InP substrates have been characterized by atomic force and transmission electron microscopy. Measurement of high‐energy electron diffraction during the growth indicates a Stransky–Krastanov growth mode beyond the onset of 1.4 InSb monolayer (ML) deposition. The dots obtained after a total deposition of 5 and 7 ML of InSb present a truncated pyramidal morphology with rectangular base oriented along the 〈110〉 directions, elongated towards the [110] direction with {111}B lateral facets, with {113}/{114}/{111}A lateral facets in [11¯0] views, and (001) flat top surfaces. The mismatch between the dot and the substrate has been accommodated by a network of 90° misfit dislocation at the interface. A corrugation of the InP substrate surrounding the dot has been also observed. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:69 ,  Issue: 25 )

Date of Publication:

Dec 1996

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