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The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition

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4 Author(s)
Grudowski, P.A. ; Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712‐1100 ; Holmes, A.L. ; Eiting, C.J. ; Dupuis, R.D.

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We report the growth and photoluminescence (300 and 4.2 K) characterization of unintentionally doped GaN on both exact and vicinal (0001) sapphire substrates. The GaN heteroepitaxial layers are grown by metalorganic chemical vapor deposition on sapphire substrates using various growth conditions. The (0001) Al2O3 c‐plane substrates are oriented exactly (0001) or misoriented either 2° towards the a plane (112¯0), 5° towards the m plane (101¯0), or 9° toward the m plane. A comparison of the 300 and 4.2 K optical characteristics of the samples grown on the different substrates indicates that a higher photoluminescence intensity is measured for the films on misoriented substrates. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:69 ,  Issue: 24 )

Date of Publication:

Dec 1996

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