Influence of N2O oxidation of silicon on point defect injection kinetics in the high temperature regime

In this work we investigate the influence of N2O oxidation on the kinetics of point defects at high temperatures. The interstitials that are injected during the oxidation process are monitored by the growth of preexisting oxidation stacking faults. We show that at high temperatures (1050–1150 °C), the supersaturation of self‐interstitials in the silicon substrate is enhanced when oxidation is performed in a N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios. © 1996 American Institute of Physics.