By Topic

Active mode locking at 50 GHz repetition frequency by half‐frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Sato, K. ; NTT Opto‐electronics Laboratories, Atsugi‐shi, Kanagawa Prefecture 243‐01, Japan ; Kotaka, I. ; Kondo, Y. ; Yamamoto, Mitsuo

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.117556 

Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic mode‐locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than 33 dB of the intensity modulation at the driving frequency are obtained. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:69 ,  Issue: 18 )