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Active mode locking at 50 GHz repetition frequency by half‐frequency modulation of monolithic semiconductor lasers integrated with electroabsorption modulators

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4 Author(s)
Sato, K. ; NTT Opto‐electronics Laboratories, Atsugi‐shi, Kanagawa Prefecture 243‐01, Japan ; Kotaka, I. ; Kondo, Y. ; Yamamoto, Mitsuo

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Active mode locking achieved at a 50 GHz repetition frequency by modulation at half (25 GHz) the cavity resonance frequency using a monolithic mode‐locked InGaAsP laser integrated with an electroabsorption modulator is described. A pulse width of around 3 ps and a high suppression ratio of more than 33 dB of the intensity modulation at the driving frequency are obtained. © 1996 American Institute of Physics.

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Applied Physics Letters  (Volume:69 ,  Issue: 18 )