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First order gain‐coupled GaInAs/GaAs distributed feedback laser diodes patterned by focused ion beam implantation

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5 Author(s)
Orth, A. ; Technische Physik, Universität Würzburg, Am Hubland, D‐97074 Würzburg, Germany ; Reithmaier, J.P. ; Zeh, R. ; Doleschel, H.
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Electrically pumped gain‐coupled distributed feedback lasers with first order gratings have been fabricated on a (Ga,In)As/(Al,Ga)As separate confinement heterostructure by focused ion beam implantation and epitaxial overgrowth. The lasers are operating at room temperature at wavelengths around 950 nm. All investigated devices show single longitudinal mode emission at all operating conditions. © 1996 American Institute of Physics.

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Applied Physics Letters  (Volume:69 ,  Issue: 13 )