By Topic

Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Pearton, S.J. ; University of Florida, Gainesville, Florida 32611 ; Bendi, S. ; Jones, K.S. ; Krishnamoorthy, V.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.117464 

The apparent thermal stability of hydrogen passivated Mg acceptors in GaN is a function of the annealing ambient employed, with H2 leading to a reactivation temperature approximately 150 °C higher than N2. The dissociation of Mg–H complexes and the loss of hydrogen from GaN are sequential processes, with reactivation occurring at ⩽700 °C for annealing under N2, while significant concentrations of hydrogen remain in the crystal even at 900 °C in implanted samples. The hydrogen is gettered to regions of highest defect density such as the InGaN layer in GaN/InGaN double heterostructure. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:69 ,  Issue: 13 )