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Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures

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8 Author(s)
Pearton, S.J. ; University of Florida, Gainesville, Florida 32611 ; Bendi, S. ; Jones, K.S. ; Krishnamoorthy, V.
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The apparent thermal stability of hydrogen passivated Mg acceptors in GaN is a function of the annealing ambient employed, with H2 leading to a reactivation temperature approximately 150 °C higher than N2. The dissociation of Mg–H complexes and the loss of hydrogen from GaN are sequential processes, with reactivation occurring at ⩽700 °C for annealing under N2, while significant concentrations of hydrogen remain in the crystal even at 900 °C in implanted samples. The hydrogen is gettered to regions of highest defect density such as the InGaN layer in GaN/InGaN double heterostructure. © 1996 American Institute of Physics.

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Applied Physics Letters  (Volume:69 ,  Issue: 13 )