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High quality fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition at 120 °C

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3 Author(s)
Song, Juho ; Solid State Laboratory, Department of Electrical and Computer Engineering, Louisiana State University, Baton Rouge, Louisiana 70803 ; Ajmera, P.K. ; Lee, G.S.

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Electrical characteristics of the fluorinated silicon oxide films prepared by plasma enhanced chemical vapor deposition at 120 °C using Si2H6 as silicon precursor and CF4 as fluorine precursor were studied. The addition of fluorine into Si–O network results in a decrease in the effective oxide charges as low as 1/6 of the value for the fluorine‐free silicon oxide films. It also improves the film breakdown property by significantly reducing early failures, resulting in the measured average dielectric breakdown field strength of 8.91 MV/cm. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:69 ,  Issue: 13 )