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We study Se δ‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition using hydrogen selenide as a doping precursor. The results of capacitance–voltage measurements show that the very sharp doping profile can be obtained by Se δ‐doping on an Al‐rich surface and Se segregation is also reduced by making an Al‐rich surface after δ‐doping. It is essential to utilize the δ‐doping sequence which does not have a post‐δ‐doping purge step to minimize the Se evaporation. © 1996 American Institute of Physics.