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Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2

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4 Author(s)
Fang, Tilden T. ; Stanford University, Department of Electrical Engineering, Stanford, California 94305 ; Fang, Wingra T.C. ; Griffin, Peter B. ; Plummer, James D.

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Investigation of boron diffusion in strained silicon germanium buried layers reveals a fractional interstitial component of boron diffusion (fBI) in Se0.8Ge0.2 approximately equal to the fBI value in silicon. In conjunction with computer‐simulated boron profiles, the results yield an absolute lower‐bound of fBI in Si0.8Ge0.2 of ∼0.8. In addition, the experimental methodology provides a unique vehicle for measuring the segregation coefficient; oxidation‐enhanced diffusion is used instead of an extended, inert anneal to rapidly diffuse the dopant to equilibrium levels across the interface, allowing the segregation coefficient to be measured more quickly. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 6 )

Date of Publication:

Feb 1996

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