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The onset of secondary phase precipitation during synthesis of heteroepitaxial Si1-x-yGexCy on Si(100)

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6 Author(s)
Herbots, Nicole ; Department of Physics & Astronomy, Arizona State University, Tempe, Arizona 85287‐1504 ; Ye, Peihua ; Jacobsson, Harald ; Xiang, Joan
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An upper temperature limit of 450 °C has been established for growth of heteroepitaxial Si1-x-yGexCy solid solutions with substitutional C on Si(100) by combined ion and molecular beam deposition (CIMD). At 450 °C infrared absorption spectroscopy shows that C is on substitutional sites and no SiC precipitates are detected, whereas at 560 °C the substitutional C signal is much smaller but SiC precipitates are still not detected. High resolution transmission electron microscopy shows that Si1-x-yGexCy films deposited at 560 °C exhibit Ge deficient, coherent, secondary phase clusters in the cubic diamond matrix, which are not seen in films deposited at 450 °C. These observations suggest that the clusters are C‐rich, Ge‐deficient precursors to SiC, with a lattice which is distorted but free of extended defects. Ion channeling results indicate that the Si1-x-yGexCy films might have a distribution of different bond lengths. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 6 )

Date of Publication:

Feb 1996

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