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Uncongruent laser ablation and electroless metallization of SiC

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6 Author(s)
Shafeev, G.A. ; General Physics Institute of Russian Academy of Sciences, 38, Vavilov strasse, 117942, Moscow, Russia ; Bellard, L. ; Themlin, J.‐M. ; Ammar, C.Fauquet‐Ben
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Experimental results on the ablation of a SiC single crystal in air under irradiation with a XeCl excimer laser beam are presented. XPS analysis reveals the Si enrichment of the ablated areas under an energy density of the laser beam of 1 to 3.5 J/cm2 and the formation of SiOx in the ablated areas. The nonstoichiometric ablation of SiC allows one to activate selectively the SiC surface for metal deposition from an electroless plating solution. Both Ni and Cu deposits show a good adherence to the SiC surface (up to 0.5 N/mm2). Similar results are observed with SiC ceramics with a better adherence of the electroless metal deposit. The adherence of the deposit to the ablated SiC samples increases upon HF treatment. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 6 )

Date of Publication:

Feb 1996

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