By Topic

Nitrogen induced increase of growth rate in chemical vapor deposition of diamond

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Muller‐Sebert, W. ; Fraunhofer‐Institut für Angewandte Festkörperphysik, Tullastrasse 72, D‐79108 Freiburg, Germany ; Worner, E. ; Fuchs, F. ; Wild, C.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.116733 

Polycrystalline diamond films have been grown by microwave assisted chemical vapor deposition from methane/hydrogen gas mixtures. The addition of small amounts of nitrogen with concentrations below 50 ppm to the process gas was found to drastically increase the deposition rate depending on the microwave power. At 4.2 kW microwave power a five times higher growth rate compared to nitrogen‐free depositions was achieved. The optical transmission and thermal conductivity have been measured. The incorporation of small amounts of nitrogen does not degrade the infrared transmission of the samples; the thermal conductivity measured at room temperature decreased only slightly from 20.5 to 18 W/(cm K). © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 6 )