Cart (Loading....) | Create Account
Close category search window

Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion beam

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

15 Author(s)
Ogasawara, M. ; Toshiba Research and Development Center, 1, Komukai Toshiba‐cho, Saiwaki‐ku, Kawasaki 210, Japan ; Kariya, M. ; Nakamura, H. ; Komano, H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have deposited a silicon oxide (SiOx) film with a high optical transmittance in the DUV region by a focused ion beam induced deposition technique using a gallium ion beam and a mixture of oxygen and TMCTS(1,3,5,7‐tetramethylcyclotetrasiloxane) as a source gas. The optical transmittance of a 0.3 μm thick film is higher than 90% at the wavelength of 250 nm. The transmittance of the deposited SiOx film depends on both the source gas and ion beam irradiation conditions. A scaling to explain the transmittance along with the ion beam conditions is proposed. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 6 )

Date of Publication:

Feb 1996

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.