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Beam induced deposition of an ultraviolet transparent silicon oxide film by focused gallium ion beam

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15 Author(s)
Ogasawara, M. ; Toshiba Research and Development Center, 1, Komukai Toshiba‐cho, Saiwaki‐ku, Kawasaki 210, Japan ; Kariya, M. ; Nakamura, H. ; Komano, H.
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We have deposited a silicon oxide (SiOx) film with a high optical transmittance in the DUV region by a focused ion beam induced deposition technique using a gallium ion beam and a mixture of oxygen and TMCTS(1,3,5,7‐tetramethylcyclotetrasiloxane) as a source gas. The optical transmittance of a 0.3 μm thick film is higher than 90% at the wavelength of 250 nm. The transmittance of the deposited SiOx film depends on both the source gas and ion beam irradiation conditions. A scaling to explain the transmittance along with the ion beam conditions is proposed. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 6 )

Date of Publication:

Feb 1996

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