Cart (Loading....) | Create Account
Close category search window
 

Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Tatum, J.A. ; Erik Jonsson Sch. of Eng. & Comput. Sci., Texas Univ., Dallas, TX, USA ; MacFarlane, D.L. ; Bowen, R.Chris ; Klimeck, G.
more authors

We characterize a visible, 670 nm, diode laser amplifier with respect to parameters of interest in short pulse generation and amplification. With a single pulse in the amplifier, we measure the differential gain and saturation energy of the amplifier, and changes in the optical spectrum of a pulse traveling through the amplifier. We also measure the ultrafast gain dynamics using a pump and probe technique. We find the ultrafast gain recovery time due to carrier heating is 400 fs±30 fs. Our results differ quantitatively from those reported for InGaAsP and AlGaAs amplifiers

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 4 )

Date of Publication:

Apr 1996

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.