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Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

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5 Author(s)
Tatum, J.A. ; Erik Jonsson Sch. of Eng. & Comput. Sci., Texas Univ., Dallas, TX, USA ; MacFarlane, D.L. ; Bowen, R.Chris ; Klimeck, G.
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We characterize a visible, 670 nm, diode laser amplifier with respect to parameters of interest in short pulse generation and amplification. With a single pulse in the amplifier, we measure the differential gain and saturation energy of the amplifier, and changes in the optical spectrum of a pulse traveling through the amplifier. We also measure the ultrafast gain dynamics using a pump and probe technique. We find the ultrafast gain recovery time due to carrier heating is 400 fs±30 fs. Our results differ quantitatively from those reported for InGaAsP and AlGaAs amplifiers

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 4 )

Date of Publication:

Apr 1996

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