By Topic

Nonlinear mechanisms of filamentation in broad-area semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Marciante, J.R. ; Inst. of Opt., Rochester Univ., NY, USA ; Agrawal, G.P.

There are three nonlinear mechanisms that can lead to filamentation in broad-area semiconductor lasers: gain-saturation-induced changes in the refractive index through the linewidth-enhancement factor, self-focusing due to heat-induced index changes, and self-defocusing through intensity-dependent index changes in the cladding layer. We present a theoretical model to analyze these mechanisms and their relative roles in destabilizing the laser output. We find that there exists a critical value for the linewidth-enhancement factor below which broad area lasers are stable for wide stripe widths (as wide as 250 μm) and high pumping levels (as high as 20 times threshold). We also find that broad-area lasers are less susceptible to filamentation through self-defocusing and show how an intensity-dependent index in the cladding layer may be used to suppress filamentation caused by the linewidth-enhancement factor

Published in:

Quantum Electronics, IEEE Journal of  (Volume:32 ,  Issue: 4 )