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Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications

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5 Author(s)
Blum, O. ; Sandia National Laboratories, MS0603, P.O. Box 5800, Albuquerque, New Mexico 87185 ; Geib, K.M. ; Hafich, M.J. ; Klem, J.F.
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We demonstrate wet thermal oxidation of an AlAsSb layer lattice matched to an InP substrate. Oxidation in an InGaAs/AlAsSb/InGaAs structure proceeds in a lateral direction, producing an oxide layer embedded between two layers of InGaAs. Auger analysis and Raman spectroscopy indicate conversion of the AlAsSb into an aluminum oxide with an elemental antimony layer at the top oxide‐InGaAs interface. Scanning electron microscope cross‐sectional views of partially and fully oxidized samples are also presented.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 22 )

Date of Publication:

May 1996

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