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The incorporation of hydrogen has been investigated using secondary ion mass spectroscopy in arsenic and nitrogen doped ZnSe epitaxial layers grown by organometallic vapor phase epitaxy in a metalhydride free environment. Diisopropylselenide, diethylzinc, tertiarybutylarsine, and tertiarybutylamine were used as precursors. Ammonia was used to provide comparative data for the analysis of the results obtained with tertiarybutylamine. The carrier gas was either hydrogen or nitrogen. The arsenic doped samples grown in nitrogen carrier gas have a low concentration of hydrogen while hydrogen is incorporated in large quantity in samples grown with hydrogen carrier gas. High concentrations of nitrogen are obtained with tertiarybutylamine at low growth temperature and with hydrogen carrier gas. Low concentrations of nitrogen are obtained with tertiarybutylamine in presence of nitrogen carrier gas. Hydrogen incorporation is reduced when using tertiarybutylamine instead of ammonia as dopant source. © 1996 American Institute of Physics.