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All laser‐assisted heteroepitaxial growth of Si0.8Ge0.2 on Si(100): Pulsed laser deposition and laser induced melting solidification

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8 Author(s)
Serna, R. ; Instituto de Optica, C.S.I.C., Serrano 121, 28006 Madrid, Spain ; Blasco, A. ; Missana, T. ; Solis, J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.116665 

The growth of heteroepitaxial Si0.8Ge0.2 films on Si(100) by a novel all laser‐assisted technique using only ArF excimer laser radiation is demonstrated. Amorphous 30 nm thick films are grown by pulsed laser deposition from alternating pure Si and Ge targets on clean Si substrates. Melting and rapid solidification is then induced by pulsed irradiation (0.54 J/cm2), promoting epitaxial growth. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 13 )

Date of Publication:

Mar 1996

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