By Topic

Low‐noise 1 THz niobium superconducting tunnel junction mixer with a normal metal tuning circuit

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Bin, M. ; George W. Downs Laboratory of Physics, 320‐47 California Institute of Technology, Pasadena, California 91125 ; Gaidis, M.C. ; Zmuidzinas, J. ; Phillips, T.G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.115915 

We describe a 1 THz quasioptical SIS mixer which uses a twin‐slot antenna, an antireflection‐coated silicon hyperhemispherical lens, Nb/Al‐oxide/Nb tunnel junctions, and an aluminum normal‐metal tuning circuit in a two‐junction configuration. Since the mixer operates substantially above the gap frequency of niobium (ν≳2Δ/h∼700 GHz), a normal metal is used in the tuning circuit in place of niobium to reduce the Ohmic loss. The frequency response of the device was measured using a Fourier transform spectrometer and agrees reasonably well with the theoretical prediction. At 1042 GHz, the uncorrected double‐sideband receiver noise temperature is 840 K when the physical temperature of the mixer is 2.5 K. This is the first SIS mixer which outperforms GaAs Schottky diode mixers by a large margin at 1 THz. © 1996 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:68 ,  Issue: 12 )