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Radiation-induced defects in chemical-mechanical polished MOS oxides

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5 Author(s)
Shaneyfelt, M.R. ; Sandia Nat. Labs., Albuquerque, NM, USA ; Warren, W.L. ; Hetherington, D.L. ; Winokur, P.S.
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Defect centers in chemical-mechanical polished MOS oxides generated by either X-ray irradiation or high-field stress have been characterized using electron paramagnetic resonance and C-V analysis. In X-ray irradiated samples equivalent densities of both oxide trap E' and interface-trap Pb0 centers were detected in unpolished and polished oxides. In addition, significantly larger (6 times) densities of Pb1 centers were observed in irradiated chemical-mechanical polished oxides as opposed to unpolished oxides. This suggests that the polishing process alters the SiO2/Si interface. However, the Pb1 centers detected in these samples do not respond electrically like conventional interface traps or border traps. This raises questions concerning the electrical and physical nature of Pb1 centers in these oxides. The high-field stress data showed no difference in the density of defect centers induced in polished and unpolished oxides Pb1 centers were not observed in either oxide following high-field stress

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Nuclear Science, IEEE Transactions on  (Volume:42 ,  Issue: 6 )