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Characterization method for ionizing radiation degradation in power MOSFETs

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7 Author(s)
M. de la Bardonnie ; Centre d'Etudes Fondamentales, Perpignan Univ., France ; A. Maouad ; P. Mialhe ; O. Elmazria
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An innovative method for power MOSFET's characterization is presented. The radiation-induced degradation of structural parameters in the body-drain junction is shown to be related to the total dose. These results provide a new way, through these new parameters, to qualify the radiation response of power MOSFETs

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IEEE Transactions on Nuclear Science  (Volume:42 ,  Issue: 6 )