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Browse Journals & Magazines > Nuclear Science, IEEE Transac ...> Volume:42 Issue:6 Help

Characterization method for ionizing radiation degradation in power MOSFETs

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7 Author(s)
de la Bardonnie, M. ; Centre d''Etudes Fondamentales, Perpignan Univ., France ; Maouad, A. ; Mialhe, P. ; Elmazria, O.
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An innovative method for power MOSFET's characterization is presented. The radiation-induced degradation of structural parameters in the body-drain junction is shown to be related to the total dose. These results provide a new way, through these new parameters, to qualify the radiation response of power MOSFETs

Published in:
Nuclear Science, IEEE Transactions on  (Volume:42 ,  Issue: 6 )

Date of Publication: Dec 1995

Page(s):
1622 - 1627
ISSN :
0018-9499
INSPEC Accession Number:
5173224
Digital Object Identifier :
10.1109/23.488758
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
Dec 1995
Sponsored by :
IEEE Nuclear and Plasma Sciences Society

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