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The role of excess arsenic in interface mixing in low‐temperature‐grown AlAs/GaAs superlattices

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5 Author(s)
Lahiri, I. ; Department of Physics and the MRSEC for Technology‐Enabling Heterostructure Materials, Purdue University, West Lafayette, Indiana 47907‐1396 ; Nolte, D.D. ; Chang, J.C.P. ; Woodall, J.M.
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Undoped low‐temperature‐grown AlAs/GaAs superlattices experience pronounced interface intermixing with increasing anneal temperatures up to 900 °C. Quantum confinement shifts caused by intermixing of low‐temperature‐grown and standard‐temperature‐grown superlattices were studied using electromodulation spectroscopy. The effective activation energy for intermixing in the low‐temperature‐grown superlattices during 30 s isochronal postgrowth anneals was found to be (0.32±0.04) eV, anomalously smaller than for standard‐temperature‐grown superlattices. Roughening of the interfaces caused by arsenic precipitates accompanies the intermixing. Qualitative features of the intermixing have been confirmed using high resolution transmission electron microscopy and studies on x‐ray rocking curves. © 1995 American Institute of Physics.

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Applied Physics Letters  (Volume:67 ,  Issue: 9 )