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Critical current‐length product for electromigration induced resistance changes in short Al lines

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4 Author(s)
Kraayeveld, J.R. ; Delft Institute of Microelectronics and Submicron Technology, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands ; Verbruggen, A.H. ; Willemsen, A.W.‐J. ; Radelaar, S.

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Changes in the electrical resistance induced by electromigration in short (3–100 μm) pure Al lines show a rather well‐defined behavior. An applied dc current induces either an increase or a decrease of the resistance. For current densities below a critical value the resistance change saturates with time and the resistance fully recovers when the current is switched off. The length and temperature dependence of the resistance changes indicate that the observed time dependence is determined by grain boundary diffusion along the whole line length. Above the critical current density the resistance changes do not fully recover. Given the inevitable sample‐to‐sample variations, the product of the critical current density and the line length is constant. The value of this product is in good agreement with values of the constant product of threshold current density and line length found in drift velocity experiments. © 1995 American Institute of Physics.

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Applied Physics Letters  (Volume:67 ,  Issue: 9 )