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Characteristics of longitudinal optical phonon assisted quantum carrier capture process‐temperature and bias dependence

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4 Author(s)
Wu, Ta‐Chung ; Department of EECS, University of California at Berkeley, Berkeley, California 94720 ; Kan, Sidney C. ; Vassilovski, D. ; Lau, Kam Y.

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The quantum carrier capture time in a quantum well laser is calculated as a function of temperature and bias current. The calculated results show good consistency with recent measurements on the small signal frequency response of a quantum well laser at cryogenic temperatures. This calculation reveals some of the characteristics of longitudinal optical phonon assisted quantum carrier capture phenomena in quantum well structures. © 1995 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:67 ,  Issue: 9 )

Date of Publication:

Aug 1995

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